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First-principles calculations of the magnetic anisotropic constants of Co–Pd multilayers: Effect of stacking faults
Using first-principles density functional theory calculations with spin-orbit coupling, we systematically investigate the magnetic anisotropic energy (MAE) of ConPdm (n+m=5) magnetic multilayers. We consider the influences of the relative atomic weight of Co, wCo, stacking fault, and external stress...
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Published in: | Europhysics letters 2012-07, Vol.99 (1), p.17001 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Using first-principles density functional theory calculations with spin-orbit coupling, we systematically investigate the magnetic anisotropic energy (MAE) of ConPdm (n+m=5) magnetic multilayers. We consider the influences of the relative atomic weight of Co, wCo, stacking fault, and external stress on the MAE. We find that out-of-plane lattice constant, saturation magnetization, and magnetic moments are almost linearly correlated with wCo. The magnetic anisotropic constant (MAC) curve of ConPdm without stacking fault shows a near-linear dependence on wCo that agrees with our derived effective MAC Kueff which includes shape, magneto-crystalline, and magneto-elastic contributions. We also show that the contributions from Pd layers to both the total magnetic moments and magnetic anisotropy are significant. The stress anisotropy due to the substrate has a weak effect on the MAC. However the stacking fault has a strong effect on the MAC. When the Co layer is thin, a Co–Pd interface without stacking fault is necessary for higher Kueff. However, when the Co layer is thick, creating stacking faults inside the Co region may produce a larger Kueff. Our study suggests the ways to increase the perpendicular magnetic anisotropy in Co–Pd multilayer systems and subsequently leads to the development of novel magnetic recording devices. |
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ISSN: | 0295-5075 1286-4854 |
DOI: | 10.1209/0295-5075/99/17001 |