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E-beam synthesized fast-switching TiO 2 /SnO 2 type-II heterostructure photodetector
A fast-switching / heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition...
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| Published in: | Applied optics (2004) 2024-05, Vol.63 (15), p.4014 |
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| Language: | English |
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| container_issue | 15 |
| container_start_page | 4014 |
| container_title | Applied optics (2004) |
| container_volume | 63 |
| creator | Nanda, Rajib Kumar Sarkar, Mitra Barun |
| description | A fast-switching
/
heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of
(anatase and rutile) and
(rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (
) of 1.737×10
Jones and a low noise equivalent power (NEP) of 0.765×10
. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively. |
| doi_str_mv | 10.1364/AO.522709 |
| format | article |
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/
heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of
(anatase and rutile) and
(rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (
) of 1.737×10
Jones and a low noise equivalent power (NEP) of 0.765×10
. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.</description><identifier>ISSN: 1559-128X</identifier><identifier>EISSN: 2155-3165</identifier><identifier>DOI: 10.1364/AO.522709</identifier><identifier>PMID: 38856492</identifier><language>eng</language><publisher>United States</publisher><ispartof>Applied optics (2004), 2024-05, Vol.63 (15), p.4014</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c572-85183ce944a8d533178541fe8b26873a68d68c63c5ef9a682aec4aff9a37705e3</cites><orcidid>0000-0002-4590-7955 ; 0000-0002-0862-8148</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3258,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/38856492$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Nanda, Rajib Kumar</creatorcontrib><creatorcontrib>Sarkar, Mitra Barun</creatorcontrib><title>E-beam synthesized fast-switching TiO 2 /SnO 2 type-II heterostructure photodetector</title><title>Applied optics (2004)</title><addtitle>Appl Opt</addtitle><description>A fast-switching
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heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of
(anatase and rutile) and
(rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (
) of 1.737×10
Jones and a low noise equivalent power (NEP) of 0.765×10
. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.</description><issn>1559-128X</issn><issn>2155-3165</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRbK0e_AOyVw_bZr83x1KqFgo5mIO3sNlMTMQ2YXeLxF9vStTT-87wMAwPQvc0WVKuxGqdLSVjOkkv0JxRKQmnSl6i-VhTQpl5m6GbED6ShEuR6ms048ZIJVI2R_mWlGAPOAzH2EBov6HCtQ2RhK82uqY9vuO8zTDDq9fjOeLQA9ntcAMRfBeiP7l48oD7potdNS5d7PwtuqrtZ4C731yg_Gmbb17IPnvebdZ74qRmxEhquINUCGsqyTnVRgpagymZMppbZSplnOJOQp2OE7PghK3HzrVOJPAFepzOuvGT4KEuet8erB8KmhRnMcU6KyYxI_swsf2pPED1T_6Z4D_0IF0o</recordid><startdate>20240520</startdate><enddate>20240520</enddate><creator>Nanda, Rajib Kumar</creator><creator>Sarkar, Mitra Barun</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-4590-7955</orcidid><orcidid>https://orcid.org/0000-0002-0862-8148</orcidid></search><sort><creationdate>20240520</creationdate><title>E-beam synthesized fast-switching TiO 2 /SnO 2 type-II heterostructure photodetector</title><author>Nanda, Rajib Kumar ; Sarkar, Mitra Barun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c572-85183ce944a8d533178541fe8b26873a68d68c63c5ef9a682aec4aff9a37705e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nanda, Rajib Kumar</creatorcontrib><creatorcontrib>Sarkar, Mitra Barun</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Applied optics (2004)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nanda, Rajib Kumar</au><au>Sarkar, Mitra Barun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>E-beam synthesized fast-switching TiO 2 /SnO 2 type-II heterostructure photodetector</atitle><jtitle>Applied optics (2004)</jtitle><addtitle>Appl Opt</addtitle><date>2024-05-20</date><risdate>2024</risdate><volume>63</volume><issue>15</issue><spage>4014</spage><pages>4014-</pages><issn>1559-128X</issn><eissn>2155-3165</eissn><abstract>A fast-switching
/
heterostructure thin-film (TF) photodetector synthesized by electron beam evaporation technique is analyzed in this study. The substrate utilized is n-type silicon (Si), while gold (Au) is employed as the top electrode. To assess sample morphology and confirm elemental composition, field emission scanning electron microscopy (FESEM), energy dispersive x-ray spectroscopy (EDS), and chemical mapping were conducted. Structural characteristics were determined using X-ray diffraction (XRD) analysis. The XRD analysis confirmed the presence of various phases of
(anatase and rutile) and
(rutile). UV-Vis spectroscopy revealed multiple absorption peaks, at 447 nm, 495 nm, 560 nm, and 673 nm, within the visible spectrum. The device demonstrates high detectivity (
) of 1.737×10
Jones and a low noise equivalent power (NEP) of 0.765×10
. Evaluation of the device's switching response through current-time characteristic (I-T) analysis indicates rapid switching with a rise time and fall time of 0.33 s and 0.36 s, respectively.</abstract><cop>United States</cop><pmid>38856492</pmid><doi>10.1364/AO.522709</doi><orcidid>https://orcid.org/0000-0002-4590-7955</orcidid><orcidid>https://orcid.org/0000-0002-0862-8148</orcidid></addata></record> |
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| ispartof | Applied optics (2004), 2024-05, Vol.63 (15), p.4014 |
| issn | 1559-128X 2155-3165 |
| language | eng |
| recordid | cdi_crossref_primary_10_1364_AO_522709 |
| source | OSA Publishing |
| title | E-beam synthesized fast-switching TiO 2 /SnO 2 type-II heterostructure photodetector |
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