High-speed combined NIR low-coherence interferometry for wafer metrology

In this investigation, we describe a combined low-coherence interferometric technique to measure the surface and thickness profiles of wafers at once with high speed. The measurement system consists of a spectrally resolved interferometer to provide and monitor the optical path difference between tw...

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Published in:Applied optics (2004) 2017-11, Vol.56 (31), p.8592
Main Authors: Park, Hyo Mi, Joo, Ki-Nam
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Language:English
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description In this investigation, we describe a combined low-coherence interferometric technique to measure the surface and thickness profiles of wafers at once with high speed. The measurement system consists of a spectrally resolved interferometer to provide and monitor the optical path difference between two incident beams of the optical source part and a low-coherence scanning interferometer to measure the dimensions of wafers with significantly shortened scanning length. In the experiments, a silicon wafer and a sapphire wafer, of which both sides are polished, were used as targets of the measurement system for verification of the proposed system. As a result, the scanning length of the low-coherence scanning interferometer was reduced from a few millimeters to a few hundreds of micrometers approximately 10 times. In addition, surface profiles of both sides and thickness profiles were simultaneously measured to reconstruct 3D shapes of wafers.
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title High-speed combined NIR low-coherence interferometry for wafer metrology
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