High-performance position-sensitive detector based on the lateral photovoltaic effect in MoSe 2 /p-Si junctions

Optoelectronic position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been a focus of research due to their ability to detect very small displacements. In this paper, we investigate the LPE properties of / - junctions prepared using pulsed laser deposition. The LPE s...

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Bibliographic Details
Published in:Applied optics (2004) 2019-07, Vol.58 (19), p.5200
Main Authors: Zhao, Xiaofeng, Zhang, Lingrui, Gai, Qiying, Hu, Chang, Wang, Xianjie
Format: Article
Language:English
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Summary:Optoelectronic position-sensitive detectors (PSDs) based on the lateral photovoltaic effect (LPE) have been a focus of research due to their ability to detect very small displacements. In this paper, we investigate the LPE properties of / - junctions prepared using pulsed laser deposition. The LPE shows a good linear dependence with the position of the laser spot. A large positional sensitivity and a fast optical relaxation time of 563     and 2 μs, respectively, were observed in the (10 nm)/ - junction. The influence of the laser power and the wavelength on the LPE suggests that the observed response originates from the photoelectric effect. The large positional sensitivity and fast relaxation time of the LPE make the / - junction a promising candidate for PSDs.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.58.005200