Anisotropic photoluminescence of nonpolar ZnO epilayers and ZnO/Zn 1-x Mg x O multiple quantum wells grown on LiGaO 2 substrate

The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumabl...

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Bibliographic Details
Published in:Optics express 2020-02, Vol.28 (4), p.5629
Main Authors: Yan, Tao, Trinkler, L, Korsaks, V, Lu, C-Y J, Berzina, B, Chang, L, Chou, M M C, Ploog, K H
Format: Article
Language:English
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Summary:The temperature-dependent polarized photoluminescence spectra of nonpolar ZnO samples were investigated by 263 nm laser. The degree of polarization (DOP) of m-plane quantum wells changes from 76% at 10 K to 40% at 300 K, which is much higher than that of epilayer. The strong anisotropy was presumably attributed to the enhanced confinement effect of a one-dimension confinement structure formed by the intersection of quantum well and basal stacking fault. The polarization of laser beam also has an influence on the DOP. It is assumed that the luminescence polarization should be affected not only by the in-plane strains but also the microstructural defects, which do modify the electronic band structure.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.385828