Cavity-enhanced InGaAs photo-FET with a metal gate reflector fabricated by wafer bonding on Si

Although an InGaAs photo field-effect transistor (photo-FET) is a promising solution for high-performance photodetector due to its internal gain mechanism, the reported opto-electrical performance is limited by the low absorption caused by its thin body thickness and unoptimized electrical propertie...

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Bibliographic Details
Published in:Optics express 2021-12, Vol.29 (26), p.42630
Main Authors: Kang, Sooseok, Ahn, DaeHwan, Lee, Inho, Choi, Won Jun, Song, Jindong, Han, Jae-Hoon
Format: Article
Language:English
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Summary:Although an InGaAs photo field-effect transistor (photo-FET) is a promising solution for high-performance photodetector due to its internal gain mechanism, the reported opto-electrical performance is limited by the low absorption caused by its thin body thickness and unoptimized electrical properties. To overcome this limitation, an InGaAs photo-FET with a metal gate reflector was demonstrated to achieve both high electrical and optical performance. We designed and optimized a metal-oxide-semiconductor (MOS) structure with the metal gate reflector by using numerical calculation and process optimization. Thanks to the optimization of both electrical and optical characteristics, the InGaAs photo-FETs were successfully demonstrated at the wavelengths of 1305 nm and 1550 nm. Therefore, this wafer-bonded InGaAs photo-FET with the metal gate reflector is a promising candidate for a high-performance and broad-band SWIR photodetector on a Si CMOS platform.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.443673