Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band

Photonic integrated circuits (PICs) based on gallium nitride (GaN) platforms have been widely explored for various applications at C-band (1530 nm∼1565 nm) and visible light wavelength range. However, for O-band (1260 nm∼1360 nm) commonly used in short reach/cost sensitive markets, GaN-based PICs st...

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Published in:Optics express 2023-12, Vol.31 (26), p.42795
Main Authors: Cai, Yuefei, Wu, Kaiyi, Ma, Zhipeng, Zhao, Shiao, Zhang, Yu
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Language:English
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container_issue 26
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container_title Optics express
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creator Cai, Yuefei
Wu, Kaiyi
Ma, Zhipeng
Zhao, Shiao
Zhang, Yu
description Photonic integrated circuits (PICs) based on gallium nitride (GaN) platforms have been widely explored for various applications at C-band (1530 nm∼1565 nm) and visible light wavelength range. However, for O-band (1260 nm∼1360 nm) commonly used in short reach/cost sensitive markets, GaN-based PICs still have not been fully investigated. In this article, a microring resonator with an intrinsic Q-factor of ∼2.67 × 10 and an extinction ratio (ER) of 35.1 dB at 1319.9 nm and 1332.1 nm, is monolithically integrated with a transverse electric-polarized focusing grating coupler and a ridge waveguide on a GaN-on-sapphire platform. This shows a great potential to further exploit the optical properties of GaN materials and integrate GaN-based PICs with the mature GaN active electronic and optoelectronic devices to form a greater platform of optoelectronic-electronic integrated circuits (OEICs) for data-center and telecom applications.
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title Integration of large-extinction-ratio resonators with grating couplers and waveguides on GaN-on-sapphire at O-band
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