High-power, (AlGaIn)(Assb) semiconductor disk laser at 2.0 μm

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Published in:Optics letters 2008-01, Vol.33 (2), p.201-203
Main Authors: HOPKINS, J.-M, HEMPLER, N, RÖSENER, B, SCHULZ, N, RATTUNDE, M, MANZ, C, KÖHLER, K, WAGNER, J, BURNS, D
Format: Article
Language:English
Subjects:
Beam characteristics: profile, intensity, and power
spatial pattern formation
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser optical systems: design and operation
Lasers
Optics
Physics
Resonators, cavities, amplifiers, arrays, and rings
Semiconductor lasers
laser diodes
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cited_by cdi_FETCH-LOGICAL-c265t-968650f6d19d17e4c1c7f418b26ff1c4e94cd1b2225401609d5bd8bade5785f33
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container_end_page 203
container_issue 2
container_start_page 201
container_title Optics letters
container_volume 33
creator HOPKINS, J.-M
HEMPLER, N
RÖSENER, B
SCHULZ, N
RATTUNDE, M
MANZ, C
KÖHLER, K
WAGNER, J
BURNS, D
description
doi_str_mv 10.1364/OL.33.000201
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source Optica Publishing Group (OPG)
subjects Beam characteristics: profile, intensity, and power
spatial pattern formation
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser optical systems: design and operation
Lasers
Optics
Physics
Resonators, cavities, amplifiers, arrays, and rings
Semiconductor lasers
laser diodes
title High-power, (AlGaIn)(Assb) semiconductor disk laser at 2.0 μm
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