Thickness-dependent Auger scattering in a single WS 2 microcrystal probed with time-resolved terahertz near-field microscopy

Time-resolved terahertz (THz) spectroscopy has been shown as a powerful technique to non-invasively determine the charge carrier properties in photoexcited semiconductors. However, the long wavelengths of terahertz radiation reduce the applicability of this technique to large samples. Using THz near...

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Published in:Optics letters 2023-02, Vol.48 (3), p.708
Main Authors: Ter Huurne, Stan E T, van Hoof, Niels J J, Gómez Rivas, Jaime
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description Time-resolved terahertz (THz) spectroscopy has been shown as a powerful technique to non-invasively determine the charge carrier properties in photoexcited semiconductors. However, the long wavelengths of terahertz radiation reduce the applicability of this technique to large samples. Using THz near-field microscopy, we show THz measurements of the lifetime of 2D single exfoliated microcrystals of transition metal dichalcogenides (WS ). The increased spatial resolution of THz near-field microscopy allows spatial mapping of the evolution of the carrier lifetime, revealing Auger assisted surface defect recombination as the dominant recombination channel. THz near-field microscopy allows for the non-invasive and high-resolution investigation of material properties of 2D semiconductors relevant for nanoelectronic and optoelectronic applications.
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