Intense O + E + S-band emission from Pr 3+ -doped ZnF 2 -based glasses

• Published in: Optical materials express 2024-02, Vol.14 (2), p.367
• Main Authors: Yan, Jinming, Jia, Zhixu, Wang, Junjie, Zhang, Chuanze, Wang, Fangning, Mei, Yuting, Meng, Fanchao, Ohishi, Yasutake, Zhang, Daming, Qin, Weiping, Wang, Fei, Qin, Guanshi
• Format: Article
• Language: English
• ISSN: 2159-3930; 2159-3930
• DOI: 10.1364/OME.514278

Pr 3+ -doped ZnF 2 -based glasses were prepared by using a melt-quenching method in dry N 2 atmosphere. Under the excitation of a 588 nm light emitting diode (LED), ultrabroadband emissions ranging from 1245 to 1640 nm were obtained from the Pr 3+ -doped ZnF 2 -based glasses, which originate from the transitions 1 D 2 → 1 G 4 (producing E + S-band emission) and 1 G 4 → 3 H 5 (producing O-band emission) of Pr 3+ . The shape of the emission spectra could be tailored by varying the concentration of Pr 3+ . Emission spectra with the maximum full width at half maximum (FWHM) of 215 nm (1289 nm-1504 nm, covering the O + E + S-band) was obtained in the ZnF 2 -based glass at a doping concentration of 5000 ppm. The effects of the phonon energy of the matrix on O + E + S-band emission were also investigated. Our results showed that Pr 3+ -doped ZnF 2 -based glasses with low phonon energy might be used for constructing O + E + S-band lasers and optical amplifiers.