Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures

Optoelectronic memory is attracting tremendous attention as an emerging strategy to emulate the human visual system. However, most devices to date focus on converting visual information in real time, rarely meeting the expectation of memorizing that information. Here, we report the discovery of a li...

Full description

Saved in:
Bibliographic Details
Published in:Optica 2023-07, Vol.10 (7), p.897
Main Authors: Cao, Yuhong, Jiang, Kang’an, Zhao, Zhuyikang, Wang, Hui
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523
cites cdi_FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523
container_end_page
container_issue 7
container_start_page 897
container_title Optica
container_volume 10
creator Cao, Yuhong
Jiang, Kang’an
Zhao, Zhuyikang
Wang, Hui
description Optoelectronic memory is attracting tremendous attention as an emerging strategy to emulate the human visual system. However, most devices to date focus on converting visual information in real time, rarely meeting the expectation of memorizing that information. Here, we report the discovery of a light-induced nonvolatile trapping effect that shows remarkable long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. Moreover, the charge trapping capability can be enhanced almost threefold after laser irradiation, in contrast to pure electrical means. We ascribe this to barrier modulation driven by the electric and light fields. By designing an optoelectronic memory array, we demonstrate that this effect can be applied simultaneously for image sensing and preprocessing, as well as in neuromorphic reinforcement learning. This work could enable the development of photosensitive artificial intelligence devices.
doi_str_mv 10.1364/OPTICA.492416
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1364_OPTICA_492416</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1364_OPTICA_492416</sourcerecordid><originalsourceid>FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523</originalsourceid><addsrcrecordid>eNpNkE1LxDAYhIMouKx79J4_kDXfbY-y-AWF9bBevJQ0ebtG2qYmqeC_d5d68DTDDAzDg9Ato1smtLzbvx5edvdbWXHJ9AVacSEk4Uroy3_-Gm1S-qSUMiGpqugKvdcmQSRmmHrfeXB4DON36E32PWD7YeIRcI5mmvx4xNB1YDP2I04weBtGN9scIv6azZjnAbuQccrxFM4R0g266kyfYPOna_T2-HDYPZN6_3S6WhPLC52JUhScK1pdWlUIcFJZkFyXjJmWdwXjFXdaC1u04CppWXUugQIvpeVacbFGZNm1MaQUoWum6AcTfxpGmzObZmHTLGzELw4aWLM</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures</title><source>EZB Electronic Journals Library</source><creator>Cao, Yuhong ; Jiang, Kang’an ; Zhao, Zhuyikang ; Wang, Hui</creator><creatorcontrib>Cao, Yuhong ; Jiang, Kang’an ; Zhao, Zhuyikang ; Wang, Hui</creatorcontrib><description>Optoelectronic memory is attracting tremendous attention as an emerging strategy to emulate the human visual system. However, most devices to date focus on converting visual information in real time, rarely meeting the expectation of memorizing that information. Here, we report the discovery of a light-induced nonvolatile trapping effect that shows remarkable long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. Moreover, the charge trapping capability can be enhanced almost threefold after laser irradiation, in contrast to pure electrical means. We ascribe this to barrier modulation driven by the electric and light fields. By designing an optoelectronic memory array, we demonstrate that this effect can be applied simultaneously for image sensing and preprocessing, as well as in neuromorphic reinforcement learning. This work could enable the development of photosensitive artificial intelligence devices.</description><identifier>ISSN: 2334-2536</identifier><identifier>EISSN: 2334-2536</identifier><identifier>DOI: 10.1364/OPTICA.492416</identifier><language>eng</language><ispartof>Optica, 2023-07, Vol.10 (7), p.897</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523</citedby><cites>FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cao, Yuhong</creatorcontrib><creatorcontrib>Jiang, Kang’an</creatorcontrib><creatorcontrib>Zhao, Zhuyikang</creatorcontrib><creatorcontrib>Wang, Hui</creatorcontrib><title>Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures</title><title>Optica</title><description>Optoelectronic memory is attracting tremendous attention as an emerging strategy to emulate the human visual system. However, most devices to date focus on converting visual information in real time, rarely meeting the expectation of memorizing that information. Here, we report the discovery of a light-induced nonvolatile trapping effect that shows remarkable long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. Moreover, the charge trapping capability can be enhanced almost threefold after laser irradiation, in contrast to pure electrical means. We ascribe this to barrier modulation driven by the electric and light fields. By designing an optoelectronic memory array, we demonstrate that this effect can be applied simultaneously for image sensing and preprocessing, as well as in neuromorphic reinforcement learning. This work could enable the development of photosensitive artificial intelligence devices.</description><issn>2334-2536</issn><issn>2334-2536</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpNkE1LxDAYhIMouKx79J4_kDXfbY-y-AWF9bBevJQ0ebtG2qYmqeC_d5d68DTDDAzDg9Ato1smtLzbvx5edvdbWXHJ9AVacSEk4Uroy3_-Gm1S-qSUMiGpqugKvdcmQSRmmHrfeXB4DON36E32PWD7YeIRcI5mmvx4xNB1YDP2I04weBtGN9scIv6azZjnAbuQccrxFM4R0g266kyfYPOna_T2-HDYPZN6_3S6WhPLC52JUhScK1pdWlUIcFJZkFyXjJmWdwXjFXdaC1u04CppWXUugQIvpeVacbFGZNm1MaQUoWum6AcTfxpGmzObZmHTLGzELw4aWLM</recordid><startdate>20230720</startdate><enddate>20230720</enddate><creator>Cao, Yuhong</creator><creator>Jiang, Kang’an</creator><creator>Zhao, Zhuyikang</creator><creator>Wang, Hui</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20230720</creationdate><title>Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures</title><author>Cao, Yuhong ; Jiang, Kang’an ; Zhao, Zhuyikang ; Wang, Hui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cao, Yuhong</creatorcontrib><creatorcontrib>Jiang, Kang’an</creatorcontrib><creatorcontrib>Zhao, Zhuyikang</creatorcontrib><creatorcontrib>Wang, Hui</creatorcontrib><collection>CrossRef</collection><jtitle>Optica</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cao, Yuhong</au><au>Jiang, Kang’an</au><au>Zhao, Zhuyikang</au><au>Wang, Hui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures</atitle><jtitle>Optica</jtitle><date>2023-07-20</date><risdate>2023</risdate><volume>10</volume><issue>7</issue><spage>897</spage><pages>897-</pages><issn>2334-2536</issn><eissn>2334-2536</eissn><abstract>Optoelectronic memory is attracting tremendous attention as an emerging strategy to emulate the human visual system. However, most devices to date focus on converting visual information in real time, rarely meeting the expectation of memorizing that information. Here, we report the discovery of a light-induced nonvolatile trapping effect that shows remarkable long-term storage of optical signals in a molybdenum disulfide quantum dot memory structure. Moreover, the charge trapping capability can be enhanced almost threefold after laser irradiation, in contrast to pure electrical means. We ascribe this to barrier modulation driven by the electric and light fields. By designing an optoelectronic memory array, we demonstrate that this effect can be applied simultaneously for image sensing and preprocessing, as well as in neuromorphic reinforcement learning. This work could enable the development of photosensitive artificial intelligence devices.</abstract><doi>10.1364/OPTICA.492416</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2334-2536
ispartof Optica, 2023-07, Vol.10 (7), p.897
issn 2334-2536
2334-2536
language eng
recordid cdi_crossref_primary_10_1364_OPTICA_492416
source EZB Electronic Journals Library
title Laser-amplified nonvolatile charge trapping effect in semiconductor quantum dot structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T17%3A50%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Laser-amplified%20nonvolatile%20charge%20trapping%20effect%20in%20semiconductor%20quantum%20dot%20structures&rft.jtitle=Optica&rft.au=Cao,%20Yuhong&rft.date=2023-07-20&rft.volume=10&rft.issue=7&rft.spage=897&rft.pages=897-&rft.issn=2334-2536&rft.eissn=2334-2536&rft_id=info:doi/10.1364/OPTICA.492416&rft_dat=%3Ccrossref%3E10_1364_OPTICA_492416%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c276t-550edd7b68c573ed45ce426811ab2f71292d663c7bed94c194268e0e284c26523%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true