InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrat...

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Bibliographic Details
Published in:Photonics research (Washington, DC) DC), 2017-04, Vol.5 (2), p.30-34
Main Author: ANNA KAFAR SZYMON STANCZYK MARCIN SARZYNSKI SZYMON GRZANKA JAKUB GOSS IRINA MAKAROWA ANNA NOWAKOWSKA-SIWINSKA TADEK SUSKI PIOTR PERLIN
Format: Article
Language:English
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Summary:We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.
ISSN:2327-9125
2327-9125
DOI:10.1364/PRJ.5.000A30