Quadrupole SIMS Analysis of Si Concentration in GaN Layers by a Molecular Ion Detection with a Minor Isotope

The optimal condition suitable for using a quadrupole SIMS (Q-SIMS) instrument to measure the Si concentration in GaN layers for both selectively isotopic Si-implanted GaN and epitaxially Si-doped GaN was presented. The detection of 30Si14N- molecular ions under Cs+ primary ion bombardment realized...

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Bibliographic Details
Published in:Journal of Surface Analysis 2011, Vol.17(3), pp.256-259
Main Authors: Ootomo, Shinya, Yoshikawa, Hirokazu, Maruya, Hiromichi
Format: Article
Language:English
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Summary:The optimal condition suitable for using a quadrupole SIMS (Q-SIMS) instrument to measure the Si concentration in GaN layers for both selectively isotopic Si-implanted GaN and epitaxially Si-doped GaN was presented. The detection of 30Si14N- molecular ions under Cs+ primary ion bombardment realized the best dynamic range and the lowest detection limit for Q-SIMS analysis of Si in GaN layers. The detection limits of selectively isotopic 30Si and the total amount of Si naturally occurring isotopes in GaN layers can reach 2 × 1014 cm-3 and 8 × 1015 cm-3, respectively. We concluded that a Q-SIMS instrument was applicable for the analysis of the Si depth distribution in GaN layers.
ISSN:1341-1756
1347-8400
DOI:10.1384/jsa.17.256