Study and modeling of a CdS /PbS betavoltaic cell by Monte Carlo simulation

In this paper, we present simulations of the concentration of electron-hole pairs generated from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based betavoltaic cell. This model is an accurate representation of the electronic interaction has been reported. We can obtain the...

Full description

Saved in:
Bibliographic Details
Published in:Chalcogenide letters 2023-03, Vol.20 (3), p.227-233
Main Authors: Moughli, H., Azeddine, B., Tiouti, Z., Rajczyk, M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, we present simulations of the concentration of electron-hole pairs generated from each point in solid targets under Ni-63 source bombardment of a CdS/PbS-based betavoltaic cell. This model is an accurate representation of the electronic interaction has been reported. We can obtain the distribution of the electron-hole pairs generated in the CdS/PbS junction as a function of the depth by Monte Carlo simulation, this distribution allowed us to find the concentrations of excess minority carriers as a function of the thickness, which can be function and injection into the continuity equations to determine the diffusion current and then the selected petavoltage properties. The model was tested for the Ni-63 CdS/PbS structure, with energy of 17 keV.
ISSN:1584-8663
1584-8663
DOI:10.15251/CL.2023.203.227