Development of high-stable contact systems to gallium nitride microwave diodes

Saved in:
Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2008-01, Vol.10 (4), p.1-8
Main Author: Belyaev, A. E.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3
cites cdi_FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3
container_end_page 8
container_issue 4
container_start_page 1
container_title Semiconductor physics, quantum electronics, and optoelectronics
container_volume 10
creator Belyaev, A. E.
description
doi_str_mv 10.15407/spqeo10.04.001
format article
fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_15407_spqeo10_04_001</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_15407_spqeo10_04_001</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3</originalsourceid><addsrcrecordid>eNotkE1PAyEYhInRxFo9e-UP0L4sC2yPpn4mjV70TIB9aTG7S12wpv_ejfY0M5eZzEPILYcFlzXoZd5_YZoS1AsAfkZmXIFkSjbV-eSlAtaAqC_JVc6fAEJWCmbk9R4P2KV9j0OhKdBd3O5YLtZ1SH0aivWF5mMu2GdaEt3arovfPR1iGWOLtI9-TD_2gLSNqcV8TS6C7TLenHROPh4f3tfPbPP29LK-2zDPK82ZVlZj49oQbEAMvtJageMenNOrlecNOGwEytBIsFLLVjjU0wVXexmktmJOlv-903zOIwazH2Nvx6PhYP5wmBMOA7WZcIhfRvRWMw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Development of high-stable contact systems to gallium nitride microwave diodes</title><source>Directory of Open Access Journals</source><creator>Belyaev, A. E.</creator><creatorcontrib>Belyaev, A. E. ; V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +(380-44) 525-61-82 ; fax: +(380-44) 525-83-42 ; e-mail: konakova@isp.kiev.ua</creatorcontrib><identifier>ISSN: 1560-8034</identifier><identifier>EISSN: 1605-6582</identifier><identifier>DOI: 10.15407/spqeo10.04.001</identifier><language>eng</language><ispartof>Semiconductor physics, quantum electronics, and optoelectronics, 2008-01, Vol.10 (4), p.1-8</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3</citedby><cites>FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27924,27925</link.rule.ids></links><search><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +(380-44) 525-61-82</creatorcontrib><creatorcontrib>fax: +(380-44) 525-83-42</creatorcontrib><creatorcontrib>e-mail: konakova@isp.kiev.ua</creatorcontrib><title>Development of high-stable contact systems to gallium nitride microwave diodes</title><title>Semiconductor physics, quantum electronics, and optoelectronics</title><issn>1560-8034</issn><issn>1605-6582</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNotkE1PAyEYhInRxFo9e-UP0L4sC2yPpn4mjV70TIB9aTG7S12wpv_ejfY0M5eZzEPILYcFlzXoZd5_YZoS1AsAfkZmXIFkSjbV-eSlAtaAqC_JVc6fAEJWCmbk9R4P2KV9j0OhKdBd3O5YLtZ1SH0aivWF5mMu2GdaEt3arovfPR1iGWOLtI9-TD_2gLSNqcV8TS6C7TLenHROPh4f3tfPbPP29LK-2zDPK82ZVlZj49oQbEAMvtJageMenNOrlecNOGwEytBIsFLLVjjU0wVXexmktmJOlv-903zOIwazH2Nvx6PhYP5wmBMOA7WZcIhfRvRWMw</recordid><startdate>20080131</startdate><enddate>20080131</enddate><creator>Belyaev, A. E.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20080131</creationdate><title>Development of high-stable contact systems to gallium nitride microwave diodes</title><author>Belyaev, A. E.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Belyaev, A. E.</creatorcontrib><creatorcontrib>V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +(380-44) 525-61-82</creatorcontrib><creatorcontrib>fax: +(380-44) 525-83-42</creatorcontrib><creatorcontrib>e-mail: konakova@isp.kiev.ua</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductor physics, quantum electronics, and optoelectronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Belyaev, A. E.</au><aucorp>V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +(380-44) 525-61-82</aucorp><aucorp>fax: +(380-44) 525-83-42</aucorp><aucorp>e-mail: konakova@isp.kiev.ua</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of high-stable contact systems to gallium nitride microwave diodes</atitle><jtitle>Semiconductor physics, quantum electronics, and optoelectronics</jtitle><date>2008-01-31</date><risdate>2008</risdate><volume>10</volume><issue>4</issue><spage>1</spage><epage>8</epage><pages>1-8</pages><issn>1560-8034</issn><eissn>1605-6582</eissn><doi>10.15407/spqeo10.04.001</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 1560-8034
ispartof Semiconductor physics, quantum electronics, and optoelectronics, 2008-01, Vol.10 (4), p.1-8
issn 1560-8034
1605-6582
language eng
recordid cdi_crossref_primary_10_15407_spqeo10_04_001
source Directory of Open Access Journals
title Development of high-stable contact systems to gallium nitride microwave diodes
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-24T17%3A30%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Development%20of%20high-stable%20contact%20systems%20to%20gallium%20nitride%20microwave%20diodes&rft.jtitle=Semiconductor%20physics,%20quantum%20electronics,%20and%20optoelectronics&rft.au=Belyaev,%20A.%20E.&rft.aucorp=V.%20Lashkaryov%20Institute%20of%20Semiconductor%20Physics,%20NAS%20of%20Ukraine%2041,%20prospect%20Nauky,%2003028%20Kyiv,%20Ukraine%20Phone:%20+(380-44)%20525-61-82&rft.date=2008-01-31&rft.volume=10&rft.issue=4&rft.spage=1&rft.epage=8&rft.pages=1-8&rft.issn=1560-8034&rft.eissn=1605-6582&rft_id=info:doi/10.15407/spqeo10.04.001&rft_dat=%3Ccrossref%3E10_15407_spqeo10_04_001%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1271-76a7e8bdffafeefc27760b1c0bb799c180be83e5f850a575d3be7156b4c5f57a3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true