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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions

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Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2013-09, Vol.16 (3), p.273-279
Main Author: Vlaskina, S.I.
Format: Article
Language:English
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ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo16.03.273