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Changes in electrophysical properties of heavily doped n-Ge single crystals under the influence of thermoannealings
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| Published in: | Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2015-03, Vol.18 (1), p.53-56 |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites |
| Online Access: | Get full text |
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| ISSN: | 1560-8034 1605-6582 |
| DOI: | 10.15407/spqeo18.01.053 |