Oxygen ion-beam modification of vanadium oxide films for reaching a high value of the resistance temperature coefficient

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Bibliographic Details
Published in:Semiconductor physics, quantum electronics, and optoelectronics quantum electronics, and optoelectronics, 2017-07, Vol.20 (2), p.153-158
Main Author: Sabov, T.M.
Format: Article
Language:English
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ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo20.02.153