UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes

An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal o...

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Bibliographic Details
Published in:MRS Internet journal of nitride semiconductor research 2000, Vol.5 (1), Article e6
Main Authors: Brown, J.D., Boney, J., Matthews, J., Srinivasan, P., Schetzina, J.F., Nohava, Thomas, Yang, Wei, Krishnankutty, Subash
Format: Article
Language:English
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Summary:An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300000065