Yellow luminescence in Mg-doped GaN

Optical thresholds, that correspond to a level located at 1 eV above the valence band, are observed by photocapacitance techniques in n-type Mg-doped GaN. In undoped GaN, this level has been previously related to the yellow emission detected by photoluminescence. In Mg-doped GaN, this yellow lumines...

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Bibliographic Details
Published in:MRS Internet journal of nitride semiconductor research 1997, Vol.2, Article e28
Main Authors: Sánchez, F. J., Calle, F., Basak, D., Tijero, J. M. G., Sánchez-García, M. A., Monroy, E., Calleja, E., Muñoz, E., Beaumont, B., Gibart, Pierre, Serrano, J.J., Blanco, J.M.
Format: Article
Language:English
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Summary:Optical thresholds, that correspond to a level located at 1 eV above the valence band, are observed by photocapacitance techniques in n-type Mg-doped GaN. In undoped GaN, this level has been previously related to the yellow emission detected by photoluminescence. In Mg-doped GaN, this yellow luminescence is only observed for excitation energies below the Mg-related band (2.9 - 3 eV). This result evidences that Mg-doping may reduce but not avoid the formation of the yellow band related defects in n-type and semiinsulating Mg-doped samples. The fact that the yellow luminescence is not observed for excitation energies above the bandgap may be justified by a higher efficiency of the Mg-related recombination path.
ISSN:1092-5783
1092-5783
DOI:10.1557/S109257830000154X