Fabrication of GaN mesa structures

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity R c ~2×10 −5   Ω×cm 2 and Ni ohmic contacts for p-doped GaN with R c ~ 4×10 −2  Ω×cm 2 were formed. Both types of contacts were used as masks for GaN reactiv...

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Bibliographic Details
Published in:MRS Internet journal of nitride semiconductor research 1996, Vol.1, Article e38
Main Authors: Vassilevski, K.V., Rastegaeva, M.G., Babanin, A.I., Nikitina, I.P., Dmitriev, V.A.
Format: Article
Language:English
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Summary:We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity R c ~2×10 −5   Ω×cm 2 and Ni ohmic contacts for p-doped GaN with R c ~ 4×10 −2  Ω×cm 2 were formed. Both types of contacts were used as masks for GaN reactive ion etching (RIE) in a CCl 2 F 2 /Ar gas mixture. Maximum etch rates of ~ 40 nm/min were obtained. Mesa structures up to 3 μm in height were formed.
ISSN:1092-5783
1092-5783
DOI:10.1557/S1092578300002106