Improvement of the optical absorption of a photovoltaic device by embedding an ultra-thin film of CdSexTe1–x in its absorber layer

It has been reported with the use of thin films placed in the p-type and n-type layer interface in photovoltaic devices, the short-circuit current density ( J sc ) increases, this spite of decreasing the open–circuit voltage ( V oc ). In this work, in order to increase the light absorbance, and ther...

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Bibliographic Details
Published in:MRS communications 2022-12, Vol.12 (6), p.1250-1255
Main Authors: Reyes-Verdugo, Laura A., Villa-Angulo, Carlos, Solis-Pomar, Francisco
Format: Article
Language:English
Subjects:
Biomaterials
Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
Research Letter
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Summary:It has been reported with the use of thin films placed in the p-type and n-type layer interface in photovoltaic devices, the short-circuit current density ( J sc ) increases, this spite of decreasing the open–circuit voltage ( V oc ). In this work, in order to increase the light absorbance, and therefore, contribute to an increment in J sc and V oc , a novel architecture has been proposed by the deposition of a CdSe 0.6 Te 0.4 ultra-thin film placed inside de p-type layer. The proposed structure exhibited an increment in power conversion efficiency compared to another fabricated with the conventional structure. Graphical abstract PV device structures. (a) n–p device structure; (b) N–P MLs device structure the interface (c) proposed N–P MLs device structure inside the absorber layer; (d) proposed PV device already deposited structure. (a) (b) CdS layer before and after annealing (c) (d) CdSe layer before and after annealing
ISSN:2159-6867
2159-6867
DOI:10.1557/s43579-022-00303-4