The bipolar and self-rectifying resistive switching characteristics of UiO-66 modified with uric acid

A memory device with multi-mode Current–Voltage characteristics is vital for various functions in integrated circuit applications. However, studying manufacturing and controlling multifunctional devices has always been challenging for researchers. In this study, uric acid (UA) guest molecules within...

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Bibliographic Details
Published in:MRS communications 2023-04, Vol.13 (2), p.329-335
Main Authors: Do Ho, Hau Huu, Thi, Uyen Tu Doan, Thi, Nhu Hoa Tran, Vo, Trieu Quang, Nguyen, Linh Ho Thuy, Le Hoang, Tan Doan, Pham, Ngoc Kim
Format: Article
Language:English
Subjects:
Biomaterials
Characterization and Evaluation of Materials
Chemistry and Materials Science
Materials Engineering
Materials Science
Nanotechnology
Polymer Sciences
Research Letter
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Summary:A memory device with multi-mode Current–Voltage characteristics is vital for various functions in integrated circuit applications. However, studying manufacturing and controlling multifunctional devices has always been challenging for researchers. In this study, uric acid (UA) guest molecules within the UiO-66 matrix act as modulators of charge transfer processes within thin films. The Ag/UiO-66-UA–PVA/Ag device, exhibited the bipolar and self-rectifying resistive switching behavior under the voltage magnitude, which has potential applications in nonvolatile data storage and limiting leakage current in high-density crossbar structures. Graphical abstract
ISSN:2159-6867
2159-6867
DOI:10.1557/s43579-023-00348-z