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The bipolar and self-rectifying resistive switching characteristics of UiO-66 modified with uric acid
A memory device with multi-mode Current–Voltage characteristics is vital for various functions in integrated circuit applications. However, studying manufacturing and controlling multifunctional devices has always been challenging for researchers. In this study, uric acid (UA) guest molecules within...
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Published in: | MRS communications 2023-04, Vol.13 (2), p.329-335 |
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container_title | MRS communications |
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creator | Do Ho, Hau Huu Thi, Uyen Tu Doan Thi, Nhu Hoa Tran Vo, Trieu Quang Nguyen, Linh Ho Thuy Le Hoang, Tan Doan Pham, Ngoc Kim |
description | A memory device with multi-mode Current–Voltage characteristics is vital for various functions in integrated circuit applications. However, studying manufacturing and controlling multifunctional devices has always been challenging for researchers. In this study, uric acid (UA) guest molecules within the UiO-66 matrix act as modulators of charge transfer processes within thin films. The Ag/UiO-66-UA–PVA/Ag device, exhibited the bipolar and self-rectifying resistive switching behavior under the voltage magnitude, which has potential applications in nonvolatile data storage and limiting leakage current in high-density crossbar structures.
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doi_str_mv | 10.1557/s43579-023-00348-z |
format | article |
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subjects | Biomaterials Characterization and Evaluation of Materials Chemistry and Materials Science Materials Engineering Materials Science Nanotechnology Polymer Sciences Research Letter |
title | The bipolar and self-rectifying resistive switching characteristics of UiO-66 modified with uric acid |
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