Low Power, High speed, Low leakage Floating Gate SRAM Cell using LECTOR Technique

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Bibliographic Details
Published in:Indian journal of science and technology 2016-12, Vol.9 (45)
Main Authors: Bala Ray, Kanan, Mandal, Sushanta K., Shivalal Patro, B.
Format: Article
Language:English
Online Access:Get full text
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ISSN:0974-6846
0974-5645
DOI:10.17485/ijst/2016/v9i45/98971