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Advanced four-mask a-Si TFT array fabrication process using improved materials
— In order to achieve higher‐performance and lower‐cost a‐Si TFT array manufacturing, an advanced four‐mask fabrication process using low‐resistant metals, a new pixel electrode material, and improved unit processes was developed. Slit (or gray‐tone) photolithography, in combination with a continuou...
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Published in: | Journal of the Society for Information Display 2003-03, Vol.11 (1), p.203-208 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | — In order to achieve higher‐performance and lower‐cost a‐Si TFT array manufacturing, an advanced four‐mask fabrication process using low‐resistant metals, a new pixel electrode material, and improved unit processes was developed. Slit (or gray‐tone) photolithography, in combination with a continuous all‐in‐one dry‐etching process, solved the chronic problems of the current four‐mask process. Additionally, a new combination of materials and a new wet etchant for the gate‐line patterning made it possible to achieve stabilized wet‐etching results and reduced the number of process steps. Our advanced a‐Si TFT‐array fabrication process is applicable to both notebook and monitor displays, and will further improve the market position of TFT‐LCDs by improved performance and manufacturing process simplification. |
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ISSN: | 1071-0922 1938-3657 |
DOI: | 10.1889/1.1831707 |