Advanced four-mask a-Si TFT array fabrication process using improved materials

• Published in: Journal of the Society for Information Display 2003-03, Vol.11 (1), p.203-208
• Main Authors: Song, J. H., Kim, S. G., Park, H. S., Jeong, C. O., Kim, C. W., Chung, K. H.
• Format: Article
• Language: English
• Subjects: amorphous silicon; Applied sciences; Display; dry etching; Electronics; etchant; Exact sciences and technology; four-mask process; manufacturing method; Microelectronic fabrication (materials and surfaces technology); process architecture; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; TFT-LCDs
• ISSN: 1071-0922; 1938-3657
• DOI: 10.1889/1.1831707

— In order to achieve higher‐performance and lower‐cost a‐Si TFT array manufacturing, an advanced four‐mask fabrication process using low‐resistant metals, a new pixel electrode material, and improved unit processes was developed. Slit (or gray‐tone) photolithography, in combination with a continuous all‐in‐one dry‐etching process, solved the chronic problems of the current four‐mask process. Additionally, a new combination of materials and a new wet etchant for the gate‐line patterning made it possible to achieve stabilized wet‐etching results and reduced the number of process steps. Our advanced a‐Si TFT‐array fabrication process is applicable to both notebook and monitor displays, and will further improve the market position of TFT‐LCDs by improved performance and manufacturing process simplification.