P-11: a-Si TFT Model in H-Spice Simulation Fitted to the Dynamic Operation

The measurement of pixel voltage, which is impossible by a direct probing method, is carried out by the indirect method which utilizes the voltage‐luminance characteristics of real panel. New a‐Si TFT model, which is different from DC measurement but includes dynamic behavior of a‐Si TFT, predicts v...

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Published in:SID International Symposium Digest of technical papers 2003-05, Vol.34 (1), p.244-247
Main Authors: Park, Jae Hyoung, Jeon, Jae Hong, Choi, Kwon Young, Baek, Bum Ki, Lee, Jeong Young, Souk, Jun
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description The measurement of pixel voltage, which is impossible by a direct probing method, is carried out by the indirect method which utilizes the voltage‐luminance characteristics of real panel. New a‐Si TFT model, which is different from DC measurement but includes dynamic behavior of a‐Si TFT, predicts visual characteristics of real panel with more accuracy.
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title P-11: a-Si TFT Model in H-Spice Simulation Fitted to the Dynamic Operation
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