29.4L: Late‐News Paper: Dual Doped High T g White Organic Light Emitting Devices on Silicon

We report the fabrication of efficient surface‐emitting white organic light emitting diodes (OLEDs) on single crystal silicon substrates using a high Tg blue host layer with co‐deposited blue‐green and red‐orange emitter dopant molecules. The emission layer is sandwiched between a Spiro‐TAD hole tra...

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Published in:SID International Symposium Digest of technical papers 2004-05, Vol.35 (1), p.1012-1015
Main Authors: Ali, Tariq A., Jones, Gary W., Howard, Webster E.
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Language:English
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description We report the fabrication of efficient surface‐emitting white organic light emitting diodes (OLEDs) on single crystal silicon substrates using a high Tg blue host layer with co‐deposited blue‐green and red‐orange emitter dopant molecules. The emission layer is sandwiched between a Spiro‐TAD hole transport layer and an Alq 3 electron transport layer. The devices operate near the 1931 CIE white balance point with luminous efficiencies of 2.75 lum/W and current efficiencies of 8 cd/A, representing luminance of ∼1600 cd/m 2 at a current density of 20 mA/cm 2 . When tested under accelerated and uninterrupted 90% pulsed 20 mA/cm 2 drive, our OLEDs yield luminance half‐lives of over 5000 hours, which represent normalized half life at 100 cd/m 2 for color microdisplays of greater than 20,000 hours assuming a 25% duty cycle similar to that created by full motion video. These results enable us to meet commercial and military requirements for OLED color microdisplays employing passband filters for red, green and blue subpixel elements.
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title 29.4L: Late‐News Paper: Dual Doped High T g White Organic Light Emitting Devices on Silicon
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