P-147: Change of Secondary Electron Emission Properties with Micro-Structural Evolution of MgO Film During Growth

Preferred orientation of polycrystalline MgO film changed from (111) to (200) as the deposition rate reduced from 20Å/sec to 3Å/sec. The oxygen vacancies were easily produced at the surface of (200) plane due to low surface cohesive energy. These oxygen vacancies were acted as defect center in the b...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.1759-1761
Main Authors: Yu, Hak Ki, Lee, Jong-Lam, Park, Eung Chul, Kim, Jae Sung, Ryu, Jae Hwa
Format: Article
Language:English
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Summary:Preferred orientation of polycrystalline MgO film changed from (111) to (200) as the deposition rate reduced from 20Å/sec to 3Å/sec. The oxygen vacancies were easily produced at the surface of (200) plane due to low surface cohesive energy. These oxygen vacancies were acted as defect center in the band gap of MgO, resulting in the increase of secondary electron emission coefficient from 0.032 to 0.048.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069516