42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT

The world's largest (15‐inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4 μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V‐s, Vth of −1.3±1.4V and sub‐threshold swing (SS) of 0.96±0.10 V/dec. for a manufacturing‐orien...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.625-628
Main Authors: Lee, Je-hun, Kim, Do-hyun, Yang, Dong-ju, Hong, Sun-young, Yoon, Kap-soo, Hong, Pil-soon, Jeong, Chang-oh, Park, Hong-Sik, Kim, Shi Yul, Lim, Soon Kwon, Kim, Sang Soo, Son, Kyoung-seok, Kim, Tae-sang, Kwon, Jang-yeon, Lee, Sang-yoon
Format: Article
Language:English
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Summary:The world's largest (15‐inch) XGA active matrix liquid crystal display (AMLCD) panel made with IGZO TFTs (W/L=29.5/4 μm) was fabricated and evaluated with the field effective mobility of 4.2±0.4 cm2/V‐s, Vth of −1.3±1.4V and sub‐threshold swing (SS) of 0.96±0.10 V/dec. for a manufacturing‐oriented process, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFT) are investigated. On the glass surface, thicker regions of IGZO film have a negative threshold voltage shift. A dry etching process of molybdenum source and drain (S/D) causes negative shift of the average threshold voltage compared to wet etching in the bottom gate back channel etched TFTs. However, optimization of SiOx passivation and subsequent annealing shift average Vth positively and reduce Vth variation.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3069740