76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display

Titanium oxide (TiO x ) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etch...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1132-1135
Main Authors: Seo, Hyun‐Sik, Bae, Jong‐Uk, Kim, Dae‐Won, Ryoo, Chang II, Kang, Im‐Kuk, Min, Soon‐Young, Kim, Yong‐Yub, Han, Joon‐Soo, Kim, Chang‐Dong, Hwang, Yong‐Kee, Chung, In‐Jae
Format: Article
Language:English
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Summary:Titanium oxide (TiO x ) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO x by the surface treatment using oxygen plasma. From device measurement, we have observed that I on /I off ratio and mobility are ∼10 8 and 9 cm 2 V −1 sec −1 , respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3499856