P-25: New Polymer-Capped a-IGZO TFT with High Sensitivity to Visible Light for the Development of Integrated Touch Sensor Array

We deposit a polymer layer (P3HT) on top of a‐IGZO thin‐film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT‐capped device is about 30 times of that of standard device. These results are important for the development ofin‐cell integrated touch sensor in a ‐IG...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1316-1318
Main Authors: Zan, Hsiao-Wen, Hsueh, Hsiu-Wen, Kao, Shih-Chin, Chen, Wei-Tsung, Ku, Ming-Che, Tsai, Wu-Wei, Tsai, Chuang-Chuang, Meng, Hsin-Fei
Format: Article
Language:English
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Summary:We deposit a polymer layer (P3HT) on top of a‐IGZO thin‐film transistor (TFT) to absorbed visible light. Under white light, photoresponsivity of P3HT‐capped device is about 30 times of that of standard device. These results are important for the development ofin‐cell integrated touch sensor in a ‐IGZO TFT array.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3499931