49.4: High-definition Top-emitting AMOLED Display with Highly Reliable Oxide Semiconductor Field Effect Transistors

We have developed a highly efficient top‐emitting white OLED by employing a stable reflective anode structure and a p‐doped buffer layer. Furthermore, combining the white OLED with color filters, we succeeded in fabricating a prototype of a high‐definition AMOLED display having highly reliable OS‐FE...

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Bibliographic Details
Published in:SID International Symposium Digest of technical papers 2011-06, Vol.42 (1), p.722-725
Main Authors: Sugisawa, Nozomu, Sasaki, Toshiki, Ushikubo, Takahiro, Ohsawa, Nobuharu, Seo, Satoshi, Hatano, Kaoru, Nagata, Tkaaki, Fukai, Shuji, Murakawa, Tsutomu, Yoshitomi, Shuhei, Hayakawa, Masahiko, Miyake, Hiroyuki, Koyama, Jun, Yamazaki, Shunpei, Okazaki, Kenichi, Sakakura, Masayuki
Format: Article
Language:English
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Summary:We have developed a highly efficient top‐emitting white OLED by employing a stable reflective anode structure and a p‐doped buffer layer. Furthermore, combining the white OLED with color filters, we succeeded in fabricating a prototype of a high‐definition AMOLED display having highly reliable OS‐FETs as the backplane.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3621427