Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg 1−x Cd x Te films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO 2 /Si 3 N 4 and anodic oxide films were used. As it is...

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Bibliographic Details
Published in:Opto-electronics review 2010, Vol.18 (3), p.259-262
Main Authors: Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.M., Varavin, V.S., Dvoretskii, S.A., Mikhailov, N.N., Sidorov, Yu.G., Yakushev, M.V.
Format: Article
Language:English
Subjects:
graded-gap layer
HgCdTe
Lasers
Materials Science
MIS-structures
Nanotechnology
Optical and Electronic Materials
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
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Summary:The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg 1−x Cd x Te films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO 2 /Si 3 N 4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.
ISSN:1230-3402
1896-3757
1896-3757
DOI:10.2478/s11772-010-1029-4