320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equi...

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Bibliographic Details
Published in:Opto-electronics review 2010, Vol.18 (3), p.236-240
Main Authors: Vasilyev, V.V., Varavin, V.S., Dvoretsky, S.A., Marchishin, I.V., Mikhailov, N.N., Predein, A.V., Remesnik, V.G., Sabinina, I.V., Sidorov, Yu.G., Susliakov, A.O.
Format: Article
Language:English
Subjects:
cut off filter
FPA
HgCdTe structure
Lasers
Materials Science
MBE
Nanotechnology
Optical and Electronic Materials
Optical Devices
Optics
Photonics
photovoltaic detector
Physics
Physics and Astronomy
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Summary:A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320×256 IR FPA operating in 8–12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02×10 −7 W/cm 2 , 4.1×10 8 V/W and 27 mK, respectively.
ISSN:1230-3402
1896-3757
1896-3757
DOI:10.2478/s11772-010-1031-x