High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffus...

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Bibliographic Details
Published in:Opto-electronics review 2013, Vol.21 (4), p.402-405
Main Authors: Kopytko, M., Kębłowski, A., Gawron, W., Madejczyk, P., Kowalewski, A., Jóźwikowski, K.
Format: Article
Language:English
Subjects:
Auger suppression
barrier photodetectors
HgCdTe photodetectors
Lasers
Materials Science
MOCVD growth
Nanotechnology
Optical and Electronic Materials
Optical Devices
Optics
Original Papers
Photonics
Physics
Physics and Astronomy
uncooled photodetectors
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Summary:The paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.
ISSN:1230-3402
1896-3757
1896-3757
DOI:10.2478/s11772-013-0101-y