Recent Status of the Stochastic Issues of Photoresist Materials in EUV Lithography

In 2019, finally, extreme ultraviolet (EUV) lithography has been applied to high volume manufacturing (HVM) for preparing advanced semiconductor devices. That was very important year for EUV enthusiasts and semiconductor industry. Because it takes for a long time, more than 30 years, to study EUV li...

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Bibliographic Details
Published in:Journal of Photopolymer Science and Technology 2022/12/16, Vol.35(1), pp.35-40
Main Author: Fujimori, Toru
Format: Article
Language:English
Subjects:
Defectivity
Extreme ultraviolet
Lithography
Photoresist
Stochastic
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Summary:In 2019, finally, extreme ultraviolet (EUV) lithography has been applied to high volume manufacturing (HVM) for preparing advanced semiconductor devices. That was very important year for EUV enthusiasts and semiconductor industry. Because it takes for a long time, more than 30 years, to study EUV lithography for realizing HVM. With recent rapid progress on the source power improvement, EUV lithography development including photoresist materials has been achieved HVM requirements. However, the performance of EUV resist materials are still not enough for the expected HVM requirements, even by using the latest qualifying EUV resist materials. One of the critical issues is the stochastic issues, which will be become ‘defectivity’, like a nano-bridge or a nano-pinching. The analyzing summary of the stochastic factors in EUV lithography, and their improvement status are described in this paper. 2 (two) major stochastic issues, which are photon stochastic and chemical stochastic, were observed in the lithography steps. And the improvement status of each stochastic issues including lithographic results are also described.
ISSN:0914-9244
1349-6336
DOI:10.2494/photopolymer.35.35