METAL-INSULATOR TRANSITION PROPERTY OF HF-DOPED VO2(M1) FILMS AND ITS APPLICATION FOR RECONFIGURABLE SILICON PHOTONIC DEVICE

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Bibliographic Details
Published in:Progress in electromagnetics research. Letters 2018, Vol.76, p.133-139
Main Authors: Huang, Taixing, Du, Qingyang, Kang, Tongtong, Xie, Jianliang, Deng, Long-Jiang, Hu, Juejun, Bi, Lei
Format: Article
Language:English
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ISSN:1937-6480
1937-6480
DOI:10.2528/PIERL18022602