The development of photo-electric conversion device produced by n-silicon and p-photocatalyst layer

The opto-electronics device is an element that photoelectric conversion is possible by itself. In the present investigation, the opto-electronics device was constructed by using organic materials. From this research, we attempt to find out the characteristic of opto-electronics produced by n-silicon...

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Bibliographic Details
Published in:Journal of Advanced Science 2002/07/31, Vol.14(1-2), pp.39-40
Main Authors: Hakim, Abdul, UEGUSA, Sadao
Format: Article
Language:English
Subjects:
organic pigment
photo-electronics device
pn conjuction
Online Access:Get full text
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Summary:The opto-electronics device is an element that photoelectric conversion is possible by itself. In the present investigation, the opto-electronics device was constructed by using organic materials. From this research, we attempt to find out the characteristic of opto-electronics produced by n-silicon and p-photocatalyst layer by changing the polymerization quantity of the storage layer and the incident light intesity. It was found that the photovoltage increases linearly with incident light intesity.
ISSN:0915-5651
1881-3917
DOI:10.2978/jsas.14.39