High-performance modeling of the deposition of a silicon dioxide thin film using the LAMMPS program

Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known fro...

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Bibliographic Details
Published in:Moscow University physics bulletin 2016, Vol.71 (1), p.114-117
Main Authors: Gorokh, A. A., Grigoriev, F. V., Katkova, E. V., Sulimov, A. V., Sharapova, S. A.
Format: Article
Language:English
Subjects:
Condensed Matter Physics
Mathematical and Computational Physics
Physics
Physics and Astronomy
Theoretical
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Summary:Supercomputer modeling of the process of high-energy deposition (ion-beam sputtering) of thin films of silicon dioxide using the molecular dynamics (MD) approach was carried out. The deposition method based on the facilities of the LAMMPS MD program was compared with another method that is known from the literature. An analysis of the structure of the deposited film (density, radial distribution function, concentration of defects) was carried out.
ISSN:0027-1349
1934-8460
DOI:10.3103/S0027134916010070