Heat resistance of the interface in the silicon-on-diamond structure at a temperature of 80 K

Heat propagation at liquid nitrogen temperature in a heterostructure consisting of a polycrystalline diamond film deposited from hydrocarbon plasma on an oriented silicon substrate is studied. A technique for measuring the cooling kinetics of a thin-film indium thermometer deposited on a diamond fil...

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2010-05, Vol.37 (5), p.152-156
Main Authors: Aminev, D. F., Klokov, A. Yu, Galkina, T. I., Sharkov, A. I., Ral’chenko, V. G.
Format: Article
Language:English
Subjects:
Physics
Physics and Astronomy
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Summary:Heat propagation at liquid nitrogen temperature in a heterostructure consisting of a polycrystalline diamond film deposited from hydrocarbon plasma on an oriented silicon substrate is studied. A technique for measuring the cooling kinetics of a thin-film indium thermometer deposited on a diamond film after heating by nanosecond pulses of a nitrogen laser is used. The experimental data are compared with the results calculated within the theory of heat conduction for multilayer systems. The analysis performedmade it possible to simultaneously determine the thermal conductivity of the diamond film and the interfacial heat resistance of diamond/Si and In/diamond interfaces at liquid nitrogen temperature.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335610050076