Influence of different type irradiation on the parameters of silicon semiconductor devices

Effect of different irradiation (by electrons, neutrons, protons, and gamma) on the main properties of silicon-based semiconductor devices has been studied. A higher emphasis has been placed on transistors as the least radiation-stable structures. It is shown that under irradiation by protons the mo...

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Bibliographic Details
Published in:Journal of contemporary physics 2008-10, Vol.43 (5), p.226-230
Main Author: Sahakyan, V. A.
Format: Article
Language:English
Subjects:
Particle and Nuclear Physics
Physics
Physics and Astronomy
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Summary:Effect of different irradiation (by electrons, neutrons, protons, and gamma) on the main properties of silicon-based semiconductor devices has been studied. A higher emphasis has been placed on transistors as the least radiation-stable structures. It is shown that under irradiation by protons the modification of corresponding parameters occurs at relatively lower doses. The results are explained on the basis of arising of surface channels of conductivity under irradiation.
ISSN:1068-3372
1934-9378
DOI:10.3103/S1068337208050034