Deposition of high-ohmic oriented ZnO films on glass, Si, and PEDOT-PSS, PEDOT-PSS(PVA) substrates at low temperatures by DC-magnetron sputtering

• Published in: Journal of contemporary physics 2011-12, Vol.46 (6), p.293-299
• Main Authors: Arakelova, E. R., Khachatryan, A. M., Avjyan, K. E., Aramyan, N. S., Gevorkyan, V. A., Grigoryan, S. G., Mirzoyan, G. N.
• Format: Article
• Language: English
• Subjects: Particle and Nuclear Physics; Physics; Physics and Astronomy
• ISSN: 1068-3372; 1934-9378
• DOI: 10.3103/S1068337211060089

Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained high-ohmic ZnO films (1.1×10 9 , 2×10 11 , 1.3×10 6 , and 10 8 Ω cm) on the substrates of glass, Si, and composites based on poly(3, 4-etylendioxythiophene) doped with polystyrensulfonic acid (PEDOT-PSS), and flexible composites of PEDOT-PSS in polymer matrix of polyvinyl alcohol (PVA). Structural, optical, and electrophysical characteristics of ZnO films prepared on different substrates were studied. Films obtained in certain technological regime are on all substrates oriented along crystallographic direction (002) and have transmission coefficient of the order 80–90% in the range 400–1000 nm. The developed technology for fabrication of high-ohmic grain-oriented ZnO films at low substrate temperatures can be applied to creation of functional elements in acousto- and bioelectronics.