Peculiarities of radiothermoluminescence of gamma-irradiated borosilicates

• Published in: Surface engineering and applied electrochemistry 2013-07, Vol.49 (4), p.326-330
• Main Authors: Melikova, S. Z., Garibov, A. A., Gadzhieva, N. N., Nadzhafov, A. I.
• Format: Article
• Language: English
• Subjects: Engineering; Machines; Manufacturing; Processes
• ISSN: 1068-3755; 1934-8002
• DOI: 10.3103/S1068375513040108

The peculiarities of radiothermoluminescence of gamma-irradiated borosilicates have been investigated in the temperature range of 80–300 K. It was found that the thermal emission curves of B 2 O 3 /SiO 2 were characterized by the presence of a narrow peak at T = 136 K with activation energy of E a = 0.16 eV and a wide asymmetrical peak at T = 178 K and E a = 0.28 eV with a shoulder at T = 205 K and E a = 0.32 eV. It was established that the RTL peak at 136 K was associated with the electronic radiation center, and the peaks at 178 and 205 K with the hole centers of the B 3+ and B 4+ types, respectively. It was shown that irradiation with low doses ( D γ ≤ 0.5–30 kGy) resulted in changes in the coordination environment of the boron from the tetrahedral to the trigonal one at the B 2 O 3 content in the SiO 2 of ∼ 1.5 wt %. A radiation-resistant stable structure of borosilicate with the maximum content of trigonal-coordinated boron atoms is formed at D γ ≈ 30 kGy.