Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

The interaction of the GaSb(001) surface with fluxes of As 2 , As 4 , and Sb 4 molecules is studied using reflection high-energy electron diffraction. It is shown that As 2 molecules interact with a GaSb surface predominantly by an exchange mechanism, and As 4 molecules by the vacancy mechanism. It...

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Published in:Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2011-10, Vol.47 (5), p.452-458
Main Authors: Emel’yanov, E. A., Feklin, D. F., Vasev, A. V., Putyato, M. A., Semyagin, B. R., Vasilenko, A. P., Pchelyakov, O. P., Preobrazhenskii, V. V.
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
Physics
Physics and Astronomy
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Summary:The interaction of the GaSb(001) surface with fluxes of As 2 , As 4 , and Sb 4 molecules is studied using reflection high-energy electron diffraction. It is shown that As 2 molecules interact with a GaSb surface predominantly by an exchange mechanism, and As 4 molecules by the vacancy mechanism. It is established that for the reproducible generation of In-Sb heterointerfaces in InAs/GaSb superlattices, one needs to use a flux of As 4 molecules rather than As 2 molecules.
ISSN:8756-6990
1934-7944
DOI:10.3103/S8756699011050256