Oxidation kinetics of a silicon surface in a plasma of oxygen with inert gases

The plasma oxidation of a silicon surface in an inductive plasma generation reactor were studied using spectroscopic ellipsometry and atomic emission spectroscopy. The effect of inert gases on the formation kinetics of ultrathin SiO 2 films is discussed. The effect of intense oxidation of Si in the...

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Bibliographic Details
Published in:Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2011-10, Vol.47 (5), p.459-464
Main Authors: Antonenko, A. Kh, Volodin, V. A., Efremov, M. D., Zazulya, P. S., Kamaev, G. N., Marin, D. V.
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
Physics
Physics and Astronomy
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Summary:The plasma oxidation of a silicon surface in an inductive plasma generation reactor were studied using spectroscopic ellipsometry and atomic emission spectroscopy. The effect of inert gases on the formation kinetics of ultrathin SiO 2 films is discussed. The effect of intense oxidation of Si in the plasma formed by nominally pure helium was found. It is suggested that this effect is due to the photostimulated acceleration of the reaction at the silicon-oxide interface by the intrinsic optical emission from the helium plasma.
ISSN:8756-6990
1934-7944
DOI:10.3103/S8756699011050268