Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high re...

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Bibliographic Details
Published in:Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2019-09, Vol.55 (5), p.437-440
Main Authors: Rubtsova, N. N., Borisov, G. M., Gol’dort, V. G., Kovalyov, A. A., Ledovskikh, D. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
Physics
Physics and Astronomy
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Summary:Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.
ISSN:8756-6990
1934-7944
DOI:10.3103/S8756699019050030