Raman Scattering Spectroscopy and Photoluminescence of GaAs Nanowires

• Published in: Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2023-12, Vol.59 (6), p.659-666
• Main Authors: Kalachev, I. V., Milekhin, I. A., Emel’yanov, E. A., Preobrazhenskii, V. V., Tumashev, V. S., Milekhin, A. G., Latyshev, A. V.
• Format: Article
• Language: English
• Subjects: Lasers; Optical Devices; Optical-Physical Methods of Research and Measurement; Optics; Photonics; Physics; Physics and Astronomy
• ISSN: 8756-6990; 1934-7944
• DOI: 10.3103/S8756699023060055

Experimental data on studying the phonon and optical properties of GaAs nanowires with orientation (111) located on a gold substrate with the help of Raman scattering spectroscopy (RSS) and photoluminescence (PL) are presented. Structural parameters of nanowires are determined by the atomic-force microscopy (AFM) and scanning electron microscopy (SEM) methods. In the micro-RSS and micro-PL spectra of a single GaAs nanowire, the modes of optical phonons of GaAs and their overtones up to the third order and an exciton luminescence band are observed. In the micro-PL spectra, anisotropy of the PL intensity is observed; the maximum/minimum signal is observed at the polarization-vector direction along/across the wire. Mapping of nano-PL of a single GaAs nanowire is performed with a spatial resolution of 20 nm, which is significantly smaller than the diffraction limit. When passing to the nanometer scale, a plasmon amplification of the signal of the near-field exciton nano-PL conditioned by the metallized AFM-needle is revealed.