Flux growth of gallium orthophosphate crystals

Single crystals of the piezoelectric material α-GaPO4 were grown by the slow cooling method with spontaneous nucléation using K2Mo3O10 as a flux. Colorless and transparent crystals up to 5x2x2 mm2 were obtained by slow cooling at a rate of 5°C/h. Infrared absorption measurements revealed samples wit...

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Bibliographic Details
Published in:Annales de chimie (Paris. 1914) 2006-01, Vol.31 (1), p.97-102
Main Authors: Shvanskii, Evguiny, Armand, Pascale, Balitsky, Denis, Philippot, Etienne, Papet, Philippe
Format: Article
Language:English
Subjects:
Chemical Sciences
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Growth from melts
zone melting and refining
Material chemistry
Materials science
Methods of crystal growth
physics of crystal growth
Physics
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Summary:Single crystals of the piezoelectric material α-GaPO4 were grown by the slow cooling method with spontaneous nucléation using K2Mo3O10 as a flux. Colorless and transparent crystals up to 5x2x2 mm2 were obtained by slow cooling at a rate of 5°C/h. Infrared absorption measurements revealed samples without significant OH groups. Des monocristaux de la phase piézo-électrique α-GaPO4 ont été synthétisés par la méthode du refroidissement lent et de la nucléation spontanée avec K2Mo3O10 utilisé comme flux. Des monocristaux transparents et incolores de taille allant jusqu’à 5x2x2 mm2 ont été obtenus avec un refroidissement lent de 5°C/h. Des mesures infrarouge ont montré que les cristaux de α-GaPO4 présentent une teneur négligeable en groupements OH.
ISSN:0151-9107
0947-3580
1958-5934
DOI:10.3166/acsm.31.97-102